April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting
EL07.09.02

Ferroelectric Tunneling Junctions Based on Yttrium Doped Hafnium Dioxide

When and Where

Apr 25, 2024
2:00pm - 2:15pm
Room 342, Level 3, Summit

Presenter(s)

Co-Author(s)

Wei Chen Hung1,Yen-Lin Huang1,Chun-Wei Huang2

National Yang Ming Chiao Tung University1,Feng Chia University2

Abstract

Wei Chen Hung1,Yen-Lin Huang1,Chun-Wei Huang2

National Yang Ming Chiao Tung University1,Feng Chia University2
Hafnium dioxide (HfO<sub>2</sub>)-based thin films are considered promising ferroelectric materials for modern semiconductor integration. Various methods have been explored to induce ferroelectricity in hafnium oxide-based thin films, including atomic layer deposition, chemical doping, and solid solution techniques. Among the diverse doping species, yttrium-doped hafnium dioxide (YHO) stands out as a novel candidate due to its robust ferroelectric polarization, reliability, and scalability.<br/><br/>In this study, we are going to utilize the high ferroelectric polarization value of YHO, approximately 50 μC/cm<sup>2</sup>, to showcase ferroelectric polarization modulation of tunneling resistance. We also propose the device structure of ferroelectric tunneling junctions using YHO as the tunneling layer. We fabricate high quality epitaxial YHO thin films using pulsed laser deposition on single crystal SrTiO<sub>3</sub> (110)/(001) (STO) substrates. The crystal orientations of YHO were analyzed using X-ray diffraction, confirming the presence of the ferroelectric orthorhombic (Pca2<sub>1</sub>) phase with two structure domains. Ferroelectric tests were carried out on our YHO films by a ferroelectric tester and piezoresponse force microscopy and ferroelectric tester.<br/><br/>Subsequent to the ferroelectric measurement, we utilized conductive atomic force microscopy and piezoresponse force microscopy to measure variations in polarization direction and tunneling resistance. Ultimately, we showcase the high-quality Pt/YHO/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3 </sub>devices and measure the resistance hysteresis loops. This innovative material holds significant potential for improving the performance and efficiency of ferroelectric tunnel junctions.

Keywords

epitaxy | ferroelectricity | plasma deposition

Symposium Organizers

John Heron, University of Michigan
Morgan Trassin, ETH Zurich
Ruijuan Xu, North Carolina State University
Di Yi, Tsinghua University

Symposium Support

Gold
ADNANOTEK CORP.

Bronze
Arrayed Materials (China) Co., Ltd.
NBM Design, Inc.

Session Chairs

Lauren Garten
Aileen Luo

In this Session