Apr 23, 2024
3:30pm - 4:00pm
Room 436, Level 4, Summit
Bjorn Lussem2,Ugo Bruno1,Henrique Frulani de Paula Barbosa2,Francesca Santoro3
Istituto Italiano di Tecnologia1,Universität Bremen2,Forschungszentrum Jülich GmbH3
Bjorn Lussem2,Ugo Bruno1,Henrique Frulani de Paula Barbosa2,Francesca Santoro3
Istituto Italiano di Tecnologia1,Universität Bremen2,Forschungszentrum Jülich GmbH3
Organic Electrochemical Transistors are seen as a key element for a fully flexible and wearable sensor technology. In addition, they can be functionalized to show short- or long-term depressive behavior, and long-term potentiation. These devices, often called electrochemical neuromorphic devices (ENODes) have attracted intense research interest in the last couple of years, which led to a continuous increase in device performance.<br/>However, although the progress of the field has been impressive, their fundamental working mechanism is still under debate and an experimentally verified model to discuss ENODe behavior has been elusive. Here, we discuss our progress towards such a model. A focus is put on a correct description of the steady-state and transient switching observed in OECTs, describing important dynamics of ions and holes. In addition, faradaic reactions are introduced in the model, enabling simulations of voltage-driven processes that are usually behind countless sensing applications. Lastly, an outlook is given towards the implementation of charge transfer and ion trapping in the device that form the basis for describing neuromorphic behavior.