New Form of High-k Dielectrics for 2D Field-Effect Transistors

The integration of ultrathin insulators stands as a pivotal factor for the advancement of 2D Field-Effect Transistors (FETs) in cutting-edge technology. Presently, 2D semiconductor devices are yet to realize their complete theoretical potential, primarily due to the unavailability of suitable insulators. These insulators must strike a balance between maintaining minimal leakage currents and enabling a high gate capacitance to achieve superior gate coupling at sub-1nm Equivalent Oxide Thickness (EOT) scales. Furthermore, they must establish well-defined interfaces with the channel, exhibit minimal defect densities, and possess exceptional dielectric stability. This study showcases the power of dielectric engineering in elevating the performance of 2D FETs, offering viable avenues to develop 2D FETs characterized by remarkably low leakage currents, shorter channel lengths, and outstanding power efficiency.