April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

Event Supporters

2024 MRS Spring Meeting
EN11.08.12

Electron Transport Layers for CO2 Reduction: Conductivity, Selectivity and Stability

When and Where

Apr 25, 2024
5:00pm - 7:00pm
Flex Hall C, Level 2, Summit

Presenter(s)

Co-Author(s)

RajivRamanujam Prabhakar1,Joel Ager1

Lawrence Berkeley National Laboratory1

Abstract

RajivRamanujam Prabhakar1,Joel Ager1

Lawrence Berkeley National Laboratory1
Electron transport layers (ETLs) used as components of photocathodes for light-driven CO<sub>2</sub> reduction (CO<sub>2</sub>R) in aqueous media should have good electronic transport, be stable under CO<sub>2</sub>R conditions, and, ideally, be catalytically inert for the competing hydrogen evolution reaction (HER). Here, using planar p-Si (100) as the absorbing material, we show that TaO<sub>x</sub> satisfies all three of the above criteria. TaO<sub>x</sub> films were synthesized by both pulsed laser deposition (PLD) and radio-frequency (RF) sputtering. In both cases, careful control of the oxygen partial pressure during growth was required to produce ETLs with acceptable electron conductivity. p-Si/TaO<sub>x</sub> photocathodes were interfaced with ca. 10 nm of a CO<sub>2</sub>R catalyst: Cu or Au. Under front illumination with simulated AM 1.5G in CO<sub>2</sub>-saturated bicarbonate buffer, we observed, for both metals, faradaic efficiencies for CO<sub>2</sub>R products of ~50% and ~30% for PLD TaO<sub>x</sub> and RF sputtered TaO<sub>x</sub>, respectively, at photocurrent densities up to 8 mA cm<sup>-2</sup>. p-Si/TiO<sub>2</sub>/Cu photocathodes were also evaluated but produced mostly H<sub>2</sub> (&gt;97%) due to reduction of the TiO<sub>2</sub> to Ti metal under CO<sub>2</sub>R conditions. In contrast, a dual ETL photocathode (p-Si/TiO<sub>2</sub>/TaO<sub>x</sub>/Cu) was selective for CO<sub>2</sub>R, which suggests a strategy for separately optimizing selective charge collection and the stability of the ETL/water interface. The maximum photovoltage obtained with p-Si/TaO<sub>x</sub>/Cu devices was 300 mV which was increased to 430-460 mV by employing ion implantation to make pn<sup>+</sup>-SiTaO<sub>x</sub>/Cu structures. Photocathodes with RF sputtered TaO<sub>x</sub> ETLs are stable for CO<sub>2</sub>R for at least 300 min. Techno-economic analysis shows that the reported system, if scaled, could allow for an economically viable production of feedstocks for chemical synthesis under the adoption of specific CO<sub>2</sub> credit schemes, thus becoming a significant component to carbon-neutral manufacturing.<br/>Further to understand the why PLD TaO<sub>x </sub>electron transport layer exhibits higher product selectivity over RF sputtered TaO<sub>x</sub>, we investigated using ambient pressure x-ray photoelectron spectroscopy (APXPS) how the Cu catalyst oxidation state changes with different CO<sub>2</sub> partial pressures. There was evidence on favorable change in the oxidation state of Cu towards Cu<sup>2+</sup> when exposed to higher partial CO<sub>2</sub> pressures with different TaO<sub>x </sub>supports.

Keywords

physical vapor deposition (PVD) | x-ray photoelectron spectroscopy (XPS)

Symposium Organizers

Andrea Crovetto, Technical University of Denmark
Annie Greenaway, National Renewable Energy Laboratory
Xiaojing Hao, Univ of New South Wales
Vladan Stevanovic, Colorado School of Mines

Session Chairs

Andrea Crovetto
Xiaojing Hao

In this Session