Apr 23, 2024
4:00pm - 4:15pm
Room 348, Level 3, Summit
David Bergsman1,Yuri Choe1,Duncan Reece1
University of Washington1
David Bergsman1,Yuri Choe1,Duncan Reece1
University of Washington1
Continued progress in information and communication technologies requires sustained innovations in memory and storage devices' architecture and production processes. For example, scaling technology to sub-5nm using extreme ultraviolet (EUV) sources necessitates new processes for making hybrid organic-inorganic thin film photoresist materials that are highly adsorbing of EUV. One potential approach for making these films is through molecular layer deposition (MLD), the organic analog of atomic layer deposition. However, the discovery of desirable MLD materials is slowed by the large number of combinations of inorganic and organic reactants available.<br/><br/>Here, we present an approach for rapidly screening new materials deposited by MLD using a custom-built, high-throughput, multiplexing MLD-style reactor. In such a system, multiple reaction chambers are connected to shared reactants and pumping lines, allowing for the elimination of redundant reactor components and reducing capital costs compared to an equivalent number of independent systems. By carefully controlling pressure gradients in the system and valve operation, different MLD processes can be performed simultaneously in separate reaction chambers, allowing for many materials to be produced at the same time. These materials can then be screened for their properties of interest. To demonstrate this approach, a multiplexing reactor of this design was constructed with six independent reactor systems, two shared reactant manifold lines, and one shared pumping line. Using the well-studied trimethylaluminum (TMA) and water reaction into alumina, depositions in this system are shown to be reproducible, comparable to depositions shown in the literature, and without cross-contamination between chambers. In demonstration of the capabilities of this system, a TMA/water growth curve is developed using a combination of depositions in all systems, along with a measurement of the ALD temperature window using simultaneous depositions in all six chambers at different temperatures. Finally, the ability to simultaneously deposit multiple films is demonstrated using diethylzinc and one of six different organic diols. Using such a system can enable the faster screening of processes for potential materials, like photoresists, which will be needed for many electronic and photonic materials.