April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

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2024 MRS Spring Meeting
SF01.03.02

Engineering The Spin Transition and Carrier Type with High-Entropy Lattice Distortions in Rare Earth Cobaltates

When and Where

Apr 23, 2024
4:00pm - 4:15pm
Terrace Suite 1, Level 4, Summit

Presenter(s)

Co-Author(s)

Elliot Fuller1,Alan Zhang1,Timothy Brown1,Sangheon Oh1,Catalin Spataru1,Eli Kinigstein2,Jinghua Guo2,Joshua Sugar1,Arantzazu Mascaraque3,Enrique Michel4,Alison Shad1,Jacklyn Zhu1,Matthew Witman1,Suhas Kumar1,Alec Talin1

Sandia National Laboratories1,Lawrence Berkeley National Laboratory2,Universidad Complutense de Madrid3,Universidad Autónoma de Madrid4

Abstract

Elliot Fuller1,Alan Zhang1,Timothy Brown1,Sangheon Oh1,Catalin Spataru1,Eli Kinigstein2,Jinghua Guo2,Joshua Sugar1,Arantzazu Mascaraque3,Enrique Michel4,Alison Shad1,Jacklyn Zhu1,Matthew Witman1,Suhas Kumar1,Alec Talin1

Sandia National Laboratories1,Lawrence Berkeley National Laboratory2,Universidad Complutense de Madrid3,Universidad Autónoma de Madrid4
There is growing interest in material candidates that provide knobs to tune their properties beyond traditional limits. Compositionally complex oxides, often called high entropy oxides, are excellent candidates, wherein a lattice site shares more than four cations, forming single-phase solid solutions with unique properties. Here, we demonstrate compositional complexity as a tunable parameter in a spin-transition oxide semiconductor La<sub>(1-<i>x</i>)</sub>(Nd,Sm,Gd,Y)<i><sub>x</sub></i>CoO<sub>3</sub>, by varying the population <i>x</i> of rare earth cations. As the compositional complexity increases with <i>x</i>, localized and uniform lattice distortions occur that have profound effects on the material’s semiconductor-to-metal spin transition and carrier type. Experimental measurements, together with first-principles calculations, demonstrate that atomic-range distortions from the varying rare earth radii induce a crossover from hole-majority to electron-majority conduction at <i>x </i>= 0.8 without the introduction of electron donors. Thus, we show that control of localized lattice distortions through compositional complexity is a facile knob to tune oxide semiconductors and spin transitions beyond traditional means.

Keywords

electrical properties | rare-earths

Symposium Organizers

Ben Breitung, Karlsruhe Institute of Technology
Alannah Hallas, The University of British Columbia
Scott McCormack, University of California, Davis
T. Zac Ward, Oak Ridge National Laboratory

Session Chairs

Alannah Hallas
Alessandro Mazza

In this Session