April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

Event Supporters

2024 MRS Spring Meeting
EL04.07.03

Probing The Atomic-Scale Chemistry and Doping Defect Interactions in UWBG Semiconductors

When and Where

Apr 24, 2024
4:15pm - 4:45pm
Room 345, Level 3, Summit

Presenter(s)

Co-Author(s)

Baishakhi Mazumder1

University at Buffalo, The State University of New York1

Abstract

Baishakhi Mazumder1

University at Buffalo, The State University of New York1
<br/>Ultra-wide bandgap (UWBG) semiconductors are revolutionizing high-power electronics, promising unprecedented control over conductivity and transport properties. To unleash their full potential, we must navigate the intricate interplay between material chemistry, electrical properties, and defects. Direct experimental insights into the structural and chemical components that govern electrical transport are essential, forging a connection between theory and practical application. Among UWBG semiconductors, Ga<sub>2</sub>O<sub>3</sub> and its alloys shine as promising candidates for high-power electronics. Yet, their success hinges on the microstructures and nanoscale chemistry of active layers. Achieving tailored electrical properties and defect mitigation necessitates an intricate understanding of the interplay between structure and chemistry. Atom Probe Tomography (APT) is an advanced instrument that offers three-dimensional chemical imaging of individual atoms. When combined with machine learning, APT generates comprehensive datasets that shed light on material systems, offering insights into dopant solubility, dopant diffusion, impurities, vacancies, and defect complexes. These insights deepen our understanding of their impact on electrical transport, surpassing the limitations of conventional techniques.<br/>In this work, we undertake an atomic-scale investigation of doped Ga<sub>2</sub>O<sub>3</sub> and its associated alloys. This presentation underscores the critical significance of APT in elucidating the intricate structural and chemical characteristics of Ga<sub>2</sub>O<sub>3</sub>-based UWBG semiconductors, thereby advancing their design and development for power electronics applications. Our inquiry delves into the intricacies of doping, exerting influence on both the alpha and beta phases, while also addressing the challenges presented by defects. The knowledge gained from this analysis has the potential to reshape the synthesis of UWBG semiconductor materials, offering a new dawn for high-power electronics technology. Join us on this quest as we delve into the heart of UWBG semiconductors, where science meets innovation.

Keywords

atom probe tomography

Symposium Organizers

Hideki Hirayama, RIKEN
Robert Kaplar, Sandia National Laboratories
Sriram Krishnamoorthy, University of California, Santa Barbara
Matteo Meneghini, University of Padova

Symposium Support

Silver
Taiyo Nippon Sanso

Session Chairs

Sriram Krishnamoorthy
Yuhao Zhang

In this Session