April 22 - 26, 2024
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May 7 - 9, 2024 (Virtual)
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2024 MRS Spring Meeting & Exhibit
EL06.01.03

High-Mobility Two-Dimensional Electron Gases based on Strain Engineered Ferroelectric SrTiO3 Thin Films

When and Where

Apr 23, 2024
11:15am - 11:30am
Room 343, Level 3, Summit

Presenter(s)

Co-Author(s)

Ruchi Tomar1,Tatiana Kuznetsova2,Srijani Mallik1,Luis M. Vicente-Arche1,Fernando Gallego1,Maximilien Cazayous3,Roman Engel-Herbert2,4,Manuel Bibes1

Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay1,Pennsyvlania State University2,Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris,3,Paul Drude Institute for Solid State Electronics, Leibniz Institute within Forschungsverbund Berlin eV4

Abstract

Ruchi Tomar1,Tatiana Kuznetsova2,Srijani Mallik1,Luis M. Vicente-Arche1,Fernando Gallego1,Maximilien Cazayous3,Roman Engel-Herbert2,4,Manuel Bibes1

Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay1,Pennsyvlania State University2,Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris,3,Paul Drude Institute for Solid State Electronics, Leibniz Institute within Forschungsverbund Berlin eV4
Two-dimensional electron gases (2DEGs) based on the quantum paraelectric SrTiO<sub>3</sub> display fascinating properties such as large electron mobilities, superconductivity and efficient spin-charge interconversion owing to their Rashba spin-orbit coupling.<sup>1-3</sup> However, such 2DEGs have almost exclusively been generated in SrTiO<sub>3</sub> single crystals, with the few attempts to replace crystals by heteroepitaxial SrTiO<sub>3</sub> thin films leading to low carrier mobilities. This is limiting the potential to integrate SrTiO<sub>3</sub> 2DEGs in future devices as well as the possibility to introduce additional functionalities specific to SrTiO<sub>3</sub> thin films, such as strain-induced ferroelectricity. Here, we use oxide molecular beam epitaxy to grow high quality strain-engineered SrTiO<sub>3</sub> films that are ferroelectric up to 170 K. We then generate a 2DEG by sputtering a thin Al layer and demonstrate an increase in both the low and room temperature mobilities by up to factor of four compared to earlier literature. Furthermore, through Raman spectroscopy and magneto-transport measurements, we show that the ferroelectric character is retained after 2DEG formation. These results thus qualify our samples as ferroelectric 2DEGs up to temperatures well above previous results based on Ca-SrTiO<sub>3</sub> substrates (~30 K)<sup>4</sup>, opening the way towards ferroelectric 2DEGs operating at room temperature.<br/><b>References :</b><br/>1. M. Bibes, J. E. Villegas, and A. Barthelemy, Adv. Phys. 60, 5 (2011).<br/>2. H. Y. Hwang, Y. Iwasa, M. Kawasaki, B. Keimer, N. Nagaosa, and Y. Tokura, Nat. Mater. 11, 103 (2012).<br/>3. S. Varotto, A. Johansson, B. Göbel, L. M. Vicente-Arche1, S. Mallik, J. Bréhin , R. Salazar, F. Bertran, P. Le Fèvre, N. Bergeal, J. Rault, I. Mertig & M. Bibes, Nat. Commun., 13, 6165 (2022).<br/>4. C. W. Rischau, X. Lin, C. P. Grams, D. Finck, S.Harms, J. Engelmayer, T. Lorenz, Y. Gallais, B. Fauqué, J. Hemberger, and K. Behnia, Nat Phys, 13, 643 (2017).

Keywords

molecular beam epitaxy (MBE) | Raman spectroscopy

Symposium Organizers

Aiping Chen, Los Alamos National Laboratory
Woo Seok Choi, Sungkyunkwan University
Marta Gibert, Technische Universität Wien
Megan Holtz, Colorado School of Mines

Symposium Support

Silver
Korea Vacuum Tech, Ltd.

Bronze
Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Radiant Technologies, Inc.

Session Chairs

Aiping Chen

In this Session