Steering Doping Polarity from Synthesis Onset: Using II-V Clusters in InAs Colloidal Nanocrystals for Infrared Optoelectronics

In the realm of nanocrystal-centric optoelectronic devices, control over the carrier type control is essential, however, integrating foreign atoms into semiconductor nanocrystal lattices remains challenging. A recent standout in this semiconductor lattice domain, Indium Arsenide (InAs) colloidal nanocrystals, has been in great attention due to their promising prospects, especially in near to short-wavelength infrared optoelectronics.<br/>In this presentation, we introduce a novel methodology where doping polarity in InAs nanocrystals is innately steered from the synthesis onset. By harnessing the capabilities of II-V clusters as reaction precursors, we offer a pathway that not only addresses existing challenges but also achieves versatile control over doping polarity with the right parameter adjustments. Our exploration underscores the robust realization of p-type doping in InAs nanocrystals, indicating their integration in state-of-the-art printed electronic architectures.