Apr 24, 2024
5:00pm - 7:00pm
Flex Hall C, Level 2, Summit
Stephen O'Leary2,Mohammed Alaani1,Prakash Koirala1,Balaji Ramanujam1,Ambalanath Shan1,Adam Phillips1,Nikolas Podraza1,Robert Collins1
The University of Toledo1,University of British Columbia2
Stephen O'Leary2,Mohammed Alaani1,Prakash Koirala1,Balaji Ramanujam1,Ambalanath Shan1,Adam Phillips1,Nikolas Podraza1,Robert Collins1
The University of Toledo1,University of British Columbia2
We present some recent progress that has been made on the application of an optical function parameterization of polycrystalline Mg<i>x</i>Zn1-<i>x</i>O (MZO) thin films on the bandgap that has been used for the metrology of CdTe-based solar cell structures that incorporate MZO thin films as high resistivity transparent (HRT) layers. The acquired parametric expressions are applied to facilitate the mapping spectroscopic ellipsometry (M-SE) of device structures consisting of glass/SnO2:F/MZO. M-SE is shown to provide maps in the MZO effective thickness and bandgap within confidence limits of ± 1 nm and ± 0.003 eV, respectively. As a second application of this parameterization, performed on an as-deposited glass/SnO2:F/MZO/CdS/ CdTe device structure, has been made using through-the-glass spectroscopic ellipsometry (TG-SE). Such an analysis is also shown to provide the MZO effective thickness and bandgap. The outcome of the TG-SE analysis for this device structure enables simulations of the external quantum efficiency (EQE) spectrum of the resulting solar cell assuming different recombination losses within the individual layers of the structure. A comparison of these simulations with the experimental EQE spectrum reveals improved current collection from the front of the device incorporating an MZO HRT layer.