April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting
QT02.06.01

Single Crystal Growth and Magnetic Anisotropic Study of SmCrGe3 with Cr Linear Chain

When and Where

Apr 24, 2024
3:30pm - 4:00pm
Room 421, Level 4, Summit

Presenter(s)

Co-Author(s)

Daniel Phelan2,Mingyu Xu1,Weiwei Xie1

Michigan State University1,Argonne National Laboratory2

Abstract

Daniel Phelan2,Mingyu Xu1,Weiwei Xie1

Michigan State University1,Argonne National Laboratory2
Mingyu Xu<sup>1</sup>, Xianglin Ke<sup>2</sup>, Sergey L. Bud'ko<sup>3</sup>, Paul C. Canfield<sup>3</sup>, Weiwei Xie<sup>1*</sup><br/><br/>1. Department of Chemistry, Michigan State University, East Lansing, MI, 48824<br/>2. Department of Physics and Astronomy, Michigan State University, East Lansing, MI, 48824<br/>3. Division of Materials Science, Ames Laboratory, Ames, IA, 50010<br/><br/>SmCrGe<sub>3</sub> was reported in the polycrystalline, which has ferromagnetic order occurring at 155 K [1]. To study the magnetic behaviors of SmCrGe<sub>3</sub>, herein, the single crystals of SmCrGe<sub>3</sub> were grown using high temperature flux method. According to the single crystal X-ray diffraction, SmCrGe3 crystallizes in the hexagonal LaCrGe<sub>3</sub>-type structure with Cr linear chain along the <i>c</i>-axis, which forms the face-sharing Cr-centered octahedra aligned along the <i>c</i>-axis. Compared with itinerant magnet LaCrGe<sub>3</sub>, SmCrGe<sub>3</sub> offers the opportunity to understand the interaction between localized 4<i>f</i> election and itinerant electron in this quasi-one-dimensional system and the role of interaction played in domain pining changing [2], which may explain “one domain” behavior in LaCrGe<sub>3</sub> single crystal. Transport, magnetization, and specific heat measurements are taken. SmCrGe<sub>3</sub> behaves as a hard ferromagnetic material, which is different from other <i>RE</i>CrGe<sub>3</sub> (<i>RE</i> = La - Nd). Coercivity as the function of temperature and field-dependent pinning change are given, and the results will be discussed in detail.<br/><br/>[1] Haiying Bie, et al. <i>Chem. Mater.</i> <b>2007</b>, <i>19</i>, 4613-4620.<br/>[2] M Xu, et al. <i>Phys. Rev. B</i> <b>2023</b>, <i>107</i>, 134437.

Keywords

flux growth | x-ray diffraction (XRD)

Symposium Organizers

Zhong Lin, Binghamton University
Yunqiu Kelly Luo, University of Southern California
Andrew F. May, Oak Ridge National Laboratoryy
Dmitry Ovchinnikov, University of Kansas

Symposium Support

Silver
Thorlabs Bronze
Vacuum Technology Inc.

Session Chairs

Zhong Lin
Daniel Pajerowski

In this Session