Apr 23, 2024
3:15pm - 3:30pm
Room 342, Level 3, Summit
Zhiren He1,2,Guru Khalsa1
University of North Texas1,Cornell University2
Zhiren He1,2,Guru Khalsa1
University of North Texas1,Cornell University2
Barium hexaferrite (BaFe
12O
19) is predicted to harbor a novel multiferroic phase within which frustrated antiferroelectricity and ferrimagnetism coexist. However, experimental studies have shown that in bulk barium hexaferrite, quantum fluctuations instead lead to a quantum paraelectric ground state at low temperature [1-2]. Strain is a popular method for tuning functional properties in epitaxial thin films and has previously been used to coax ferroic electric dipole order, for example in SrTiO
3 [3]. Similarly, recent theoretical exploration has suggested that strain may enhance antiferroelectricity in barium hexaferrite [4]. In this theoretical work, we combine first-principles calculations with quantum Monte Carlo simulations to explore the temperature- and strain-dependent properties of barium hexaferrite. We find good agreement between our model and available bulk experimental data. In the investigation of strained barium hexaferrite, we find that a modest compressive strain of approximately 1% enables the transition to a frustrated antiferroelectric phase with a critical temperature of greater than 10 K. Our results suggest that further investment in epitaxy and development of compressive substrates for hexaferrites may provide a promising route towards room temperature multiferroics.
[1] Shen et al.
Phys. Rev. B 90, 180404(R) (2014)
[2] Zhang et al.
Phys. Rev. B 101, 104102 (2020)
[3] Haeni et al.
Nature 430 758–761 (2004)
[4] Wang et al.
Phys. Rev. X 4, 011035 (2014)