Apr 24, 2024
9:30am - 9:45am
Room 346, Level 3, Summit
Zach Wylie1,Soohyung Lee1,Vyvyan Dao1,Jade Paranhos-Lopes2,Nicolas Gaillard2,Vincent Holmberg1
University of Washington1,University of Hawai'i2
Zach Wylie1,Soohyung Lee1,Vyvyan Dao1,Jade Paranhos-Lopes2,Nicolas Gaillard2,Vincent Holmberg1
University of Washington1,University of Hawai'i2
Phase change memory (PCM) is a developing technology that is set to position itself as the bridge between fast, volatile, dynamic random-access memory (DRAM) and slow, non-volatile, NAND flash storage which have become the workhorses of device architecture. To store non-volatile information, PCM typically utilizes the difference in resistance between the amorphous and metastable cubic phases of pseudo-binary GeTe-Sb<sub>2</sub>Te<sub>3</sub> which undergoes a fast and reversible phase transformation. This phase change, which can occur in nanoseconds in thin films, allows for access times that can be a full order of magnitude faster than NAND flash. Despite seeming stoichiometrically imbalanced, the metastable cubic phase in Sb<sub>2</sub>Te<sub>3</sub> and its alloys do not fall immediately into the more stable layered orthorhombic phase due to stabilization from a high concentration of cation site specific defects (>30%) which decreases the antibonding characteristics around the Fermi level. These defects are also responsible for the unique disorder-induced localization of states which accounts for a majority of the phase’s resistance. A noteworthy computational study by Xu et al. has predicted several other metal chalcogenides that could theoretically share a similar metastable cubic phase.<sup>1</sup> Here, we present a direct, scalable, colloidal synthesis route for two of these previously undiscovered defect rich cubic phases for Sb<sub>2</sub>S<sub>3</sub> and Bi<sub>2</sub>S<sub>3</sub> nanocrystals. Solution syntheses such as these will prove invaluable for studying these and other metastable phases for use in PCM technology that would be otherwise inaccessible by other synthetic routes.<br/><br/>(1) Xu, Y.; Wang, X.; Zhang, W.; Schäfer, L.; Reindl, J.; vom Bruch, F.; Zhou, Y.; Evang, V.; Wang, J.; Deringer, V. L.; Ma, E.; Wuttig, M.; Mazzarello, R. Materials Screening for Disorder Controlled Chalcogenide Crystals for Phase Change Memory Applications. <i>Adv. Mater.</i> <b>2021</b>, <i>33</i> (9), 2006221.