April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

Event Supporters

2024 MRS Spring Meeting
QT07.06.03

Properties of Topological Semimetal Cd3As2 Thin Films as a Function of Growth Optimization and Buffer Choice

When and Where

Apr 24, 2024
11:15am - 11:30am
Room 448, Level 4, Summit

Presenter(s)

Co-Author(s)

Thomas Farinha1,2,Edwin Supple3,Gregory Stephen2,Nicholas Blumenschein2,Adam Friedman2,Brian Gorman3,Christopher Richardson1,2

The University of Maryland1,Laboratory for Physical Sciences2,Colorado School of Mines3

Abstract

Thomas Farinha1,2,Edwin Supple3,Gregory Stephen2,Nicholas Blumenschein2,Adam Friedman2,Brian Gorman3,Christopher Richardson1,2

The University of Maryland1,Laboratory for Physical Sciences2,Colorado School of Mines3
The Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> is a high mobility, 3D topological semimetal with potential for exploration of quantum phenomena and future information science devices. However, the dependence of its topological properties on growth and heterostructure design is not well explored. Such parameters include growth temperature, dislocation density, and biaxial strain owing to lattice mismatch. The growth of Cd<sub>3</sub>As<sub>2</sub> on different abrupt metamorphic buffer layers is therefore completed via molecular beam epitaxy. The aforementioned growth variables are considered for their effect on the final electronic and physical quality and characteristics of the thin film Cd<sub>3</sub>As<sub>2</sub>.<br/>Cd<sub>3</sub>As<sub>2</sub> is grown on relaxed AlInSb, GaInSb, and InAsSb layers with engineered lattice constants at temperatures ranging from 50 to 130 °C. X-ray diffraction and transmission electron microscopy are used to evaluate the buffer layer quality and threading dislocation density. Van der Pauw measurements are conducted to determine carrier mobility and density according to the experimental variables. With the objective of maximizing electron mobility, films are grown over a range of variables including layer thickness and annealing times.

Keywords

molecular beam epitaxy (MBE)

Symposium Organizers

Rafal Kurleto, University of Colorado Boulder
Stephan Lany, National Renewable Energy Laboratory
Stephanie Law, The Pennsylvania State University
Hsin Lin, Academia Sinica

Session Chairs

Kirstin Alberi
Hsin Lin

In this Session