Apr 24, 2024
2:15pm - 2:30pm
Terrace Suite 2, Level 4, Summit
Ladislav Havela1,Martin Divis1,Dominik Legut1,2,Jindrich Kolorenc3,Volodymyr Buturlim1,4
Charles University1,VSB2,Czech Academy of Science3,INL4
Ladislav Havela1,Martin Divis1,Dominik Legut1,2,Jindrich Kolorenc3,Volodymyr Buturlim1,4
Charles University1,VSB2,Czech Academy of Science3,INL4
The term Zintl phases denotes compounds of one electropositive element donating electrons to a complex anion with covalent bonding. We focus on layered compounds with the trigonal structure type CaAl<sub>2</sub>Si<sub>2</sub>, which are known both for actinides (U,Th) and divalent lanthanides (Eu, Yb). The lanthanide-based compounds are narrow-band antiferromagnetic semiconductors with transport properties very sensitive to magnetic fields. UCu<sub>2</sub>P<sub>2</sub> is Ising-like ferromagnet. Its <i>T</i><sub>C</sub> = 216 K steeply increases with hydrostatic pressure. Calculations reveal that the spin splitting of the 5<i>f</i> band with only one spin direction at <i>E</i><sub>F</sub> brings to the Fermi level also practically full polarization of light electrons. Hence UCu<sub>2</sub>P<sub>2</sub> is a combination of semi metal and half metal. High pressure experiments on EuZn<sub>2</sub>P<sub>2</sub> indicate that the band gap is suppressed under hydrostatic pressure of 12 GPa. Interesting aspects is brought by the layered character of the crystal structure, with <i>f</i>-element basal-plane sheets distinctly separated by the anionic slabs. This gives much longer magnetic correlations length in the basal plane. There is a striking contrast between EuZn<sub>2</sub>P<sub>2 </sub>with practically no magnetic anisotropy due to the spin-only magnetism of the <i>f </i><sup>7</sup> state and extremely strong (<i>E</i><sub>a</sub>/k<sub>B</sub> ≈ 500 K) in-plane 5<i>f</i> bonding induced anisotropy in UCu<sub>2</sub>P<sub>2</sub> with the U moments locked into the <i>c</i>-axis.<br/>The results illustrate how the <i>f</i>-systems are affected by the polar bonding. The potential of the band-gap engineering can be used for designing thermoelectrics or materials for spintronics.<br/>This work was supported by the Czech Science Foundation under the grant No. 21-09766S.