April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
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2024 MRS Spring Meeting & Exhibit
EL06.09.08

Piezo-Strain-Controlled Phase Transition in Single-Crystalline Mott Switches for Threshold-Manipulated Leaky-Integrate-And-Fire Neurons

When and Where

Apr 26, 2024
11:15am - 11:30am
Room 343, Level 3, Summit

Presenter(s)

Co-Author(s)

Dong Kyu Lee1,Sungwon Lee1,Yunkyu Park1,Si-Young Choi1,Junwoo Son1

Pohang University of Science and Technology1

Abstract

Dong Kyu Lee1,Sungwon Lee1,Yunkyu Park1,Si-Young Choi1,Junwoo Son1

Pohang University of Science and Technology1
Correlated oxides with strong correlations between the charge, spin, lattice, and orbital degrees of freedom present a wide array of emergent properties, such as metal-insulator transition, ferroelectricity, and superconductivity. These exotic functionalities give an opportunity to overcome the limitations of electronic devices; thus heteroepitaxial growth have been employed to synthesize these functional ionic crystals. However, unrestricted integration of emergent functionality from single-crystal oxide films is inhibited owing to the limited platforms to grow epitaxial films. Therefore, unrestricted integration of single-crystal oxide films has been of great interest to exploit emerging phenomena in artificial heterostructure.
Here, we demonstrate a new strategy to integrate single-crystal (002) VO2 thin films on highly lattice-mismatched (002) PMN-PT converse piezoelectric substrate (fa > 10 %) by utilizing freestanding oxide nanomembrane (NM) as epitaxial template [1]. By selective dissolution of VO2 sacrificial layers from TiO2/VO2 heterostructure grown on TiO2 substrate by H2O2 solution, millimeter-size TiO2 single-crystalline layers are integrated on PMN-PT substrate. After subsequent epitaxial growth of VO2 films on the transferred TiO2 NM, we create single-crystalline VO2/PMN-PT heterostructures with excellent sharpness of metal-insulator transition (Δρ/ρ > 103) even in ultrathin (<10 nm) VO2 films. Moreover, piezoelectric-mediated reversible strain modulation of single-crystalline VO2 films showed unprecedented modulation of TMI (5.2 K) and isothermal resistance of VO2R/R (Eg) = 20 % at 300 K) via effective stran transfer, which is not possible using directly grown VO2/PMN-PT heterostructure. Owing to the steep phase transition near the phase boundary and effective strain transfer, small changes in the lattice parameters can cause the strain induced abrupt phase transition in our VO2 films on TiO2 NM/PMN-PT substrate (ΔR/R (Eg) ≈ 18000% at 315K). The massive and reversible strain modulation of VO2 epitaxial films by the VO2/PMN-PT heterostructure offers a new type of artificial neurons with a real-time-tuned threshold values. Our strategy to utilize freestanding oxide NMs as epitaxial template for realizing single-crystalline artificial heterojunction will provide an unique opportunity to investigate unprecedented exotic functionlity for novel interfacial physics and next-generation devices.

References
[1] D. K. Lee et al., Nat. Commun. 12 (2019) 5019

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Keywords

epitaxy | metal-insulator transition

Symposium Organizers

Aiping Chen, Los Alamos National Laboratory
Woo Seok Choi, Sungkyunkwan University
Marta Gibert, Technische Universität Wien
Megan Holtz, Colorado School of Mines

Symposium Support

Silver
Korea Vacuum Tech, Ltd.

Bronze
Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Radiant Technologies, Inc.

Session Chairs

Aiping Chen
Sundar Kunwar

In this Session