April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting
EN07.14.04

Thermal Transistor and Thermal Regulator Devices Utilizing Temperature-Dependent Magnetic Forces

When and Where

Apr 25, 2024
4:00pm - 4:15pm
Room 327, Level 3, Summit

Presenter(s)

Co-Author(s)

Lorenzo Castelli1,Ajay Garg1,Qing Zhu1,Trevor Shimokusu1,Pooja Sashital1,Geoffrey Wehmeyer1

Rice University1

Abstract

Lorenzo Castelli1,Ajay Garg1,Qing Zhu1,Trevor Shimokusu1,Pooja Sashital1,Geoffrey Wehmeyer1

Rice University1
Switchable and nonlinear thermal devices are enabling technologies for applications ranging from waste heat scavenging to solid-state cooling and battery thermal management. Existing high-performance passive switching devices operating near room temperature rely primarily on thermal expansion to open or close gaps between surfaces; however, many thermal expansion switches have substantial thermal hysteresis and/or require large device thicknesses.<br/>Here, we demonstrate passive thermal switching with several devices that use temperature-dependent magnetic forces to make and break mechanical contact between thermally conductive elements. Our devices rely on the reversible paramagnetic/ferromagnetic phase transition of the magnetically soft material gadolinium, which has a convenient Curie temperature near 20<sup>o</sup>C for room temperature switching. We use this magnetically-actuated mechanism to construct a thermal regulator,<sup>1</sup> which is a two-terminal device in which the steady-state thermal conductance can be passively tuned between an ON or OFF value by the temperature of the control thermal terminal. We also demonstrate the first reported thermal transistor,<sup>2</sup> which is a three-terminal device in which the temperature at the gate terminal controls the source-drain heat flow in a manner that leads to heat flow switching and amplification.<br/>The thermal regulator displays an average thermal switch ratio of 34 (uncertainty +30,-13) in vacuum with switching temperatures near 20<sup>o</sup>C and a 5<sup>o</sup>C thermal hysteresis. The magnetic actuation mechanism leads to relatively low thermal hysteresis and smaller thicknesses (&lt;2 cm) as compared to the prior thermal expansion demonstrations. Similarly, the thermal transistor displays an average source-drain thermal switch ratio of 109 (uncertainty +62, -38) in vacuum with switching gate temperatures near 25<sup>o</sup>C and a 7<sup>o</sup>C thermal hysteresis. The thermal transistor displays measured heat flow amplifications near 30, meaning that a small gate heat flow can drive a larger source-drain heat flow, and has characteristic thermal time constants ranging from 4 to 17 minutes. We quantify the durability and performance of both devices over &gt;1000 cycles and find that the regulator switch ratio decreases by a factor of four after cycling and long-duration (0.5 year) storage. We construct proof-of-concept thermal circuits to demonstrate that these nonlinear thermal devices enable thermal logic operations, passive heat flow routing, and temperature regulation capabilities. Thus, our demonstrations of passive heat switching using a magnetic thermal regulator and thermal transistor will motivate further research implementing nonlinear thermal elements for advanced thermal management.<br/><br/>This work was supported by an Early Career Faculty grant from NASA’s Space Technology Research Grants Program (Grant #80NSSC20K0066), by a NASA Space Technology Graduate Research Opportunity (Grant # 80NSSC20K1220), and by a grant from the Welch Foundation (Grant No. C-2023).<br/><br/>References:<br/>1. L. Castelli, A. Garg, Q. Zhu, P. Sashital, T. J. Shimokusu, G. Wehmeyer, A thermal regulator using passive all-magnetic actuation, <i>Cell Reports Physical Science</i>, <b>4</b>, 101556, 2023<br/>2. L. Castelli, Q. Zhu, T. J. Shimokusu, G. Wehmeyer, A three-terminal magnetic thermal transistor, <i>Nature Communications</i>, <b>14</b>, 393, 2023

Keywords

ferroelectricity | Gd | thermal conductivity

Symposium Organizers

Woochul Kim, Yonsei University
Sheng Shen, Carnegie Mellon University
Sunmi Shin, National University of Singapore
Sebastian Volz, The University of Tokyo

Session Chairs

Taeyong Kim
Jun Liu

In this Session