Longevity and Effectiveness of 2D-MoS2 in Two-Terminal Devices: A Systematic Investigation

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are strong candidates for continued scaling of transistors to improve the current Si-based technology and facilitate next-generation nanoelectronic devices such as sensors and field-effect transistors (FETs) due to their band structures and properties. Although countless published studies report the electrical properties of TMDs, many are not attentive to the testing environment or the samples' age, which we have found significantly impacts results. Herein, we utilize 2D TMDs fabricated via different top-down and bottom-up approaches, fabricate two electrode devices, and systemically investigate their longevity and effectiveness. We characterized and compared devices using IV measurements in ambient and inert conditions and found the stability of three months for the device kept at later conditions. As expected, the observed atmospheric and aging effects have a more pronounced effect on thinner flakes. This work illustrates the importance of understanding the electrical testing environment and the impact of atmospheric aging on TMD materials.