April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting & Exhibit
SF01.11.04

Entropy-Inspired Materials Design for Novel Electronic Materials: A6B2O17-Form (A = Zr, Hf; B = Nb, Ta) Oxides

When and Where

Apr 25, 2024
2:30pm - 2:45pm
Terrace Suite 1, Level 4, Summit

Presenter(s)

Co-Author(s)

Robert Spurling1,Jon-Paul Maria1

The Pennsylvania State University1

Abstract

Robert Spurling1,Jon-Paul Maria1

The Pennsylvania State University1
In this work, we apply an entropy-inspired materials design approach to study the class of compositionally complex, disordered <i>A</i><sub>6</sub><i>B</i><sub>2</sub>O<sub>17</sub> (<i>A</i> = Zr, Hf; <i>B</i> = Nb, Ta) family of phases. The availability of multiple local coordination sites on the cation sublattice coupled with substantial tolerance for extended chemical solubility makes this a unique system for studying the interplay between configurational entropy (controlled across multiple structural hierarchies) and properties. This work focuses on both the thermodynamic consequences of configurational entropy on phase stability as well as property characterization, with particular focus on dielectric and candidate ferroelectric behavior. This work spans studies in both the bulk and thin film regimes. First, we confirm the stability of ternary and quinary <i>A</i><sub>6</sub><i>B</i><sub>2</sub>O<sub>17</sub> phases at high temperatures as well as substantial inherent cation sublattice disorder; moreover, we observe enhanced solid solubility in multi-constituent systems commonly associated with high-entropy material behavior. We develop a sintering procedure for producing dense ternary <i>A</i><sub>6</sub><i>B</i><sub>2</sub>O<sub>17</sub> phases for use as both sputtering targets for thin film preparation and bulk dielectric measurements. Furthermore, we characterize the effect of sputter deposition conditions (i.e. O<sub>2</sub> partial pressure and total pressure) on film quality (crystallinity, roughness, and density); we also relate these parameters to observed dielectric performance. Collectively, this study leverages a range of advanced characterization techniques, including both <i>ex situ</i> and <i>in situ</i> X-ray diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. These results support continued interest in such unique structures with substantial configurational entropy and suggest new opportunities for research probing structure-property relationships in high-entropy systems.

Keywords

sputtering | x-ray diffraction (XRD)

Symposium Organizers

Ben Breitung, Karlsruhe Institute of Technology
Alannah Hallas, The University of British Columbia
Scott McCormack, University of California, Davis
T. Zac Ward, Oak Ridge National Laboratory

Session Chairs

Ben Breitung
Sheng Dai

In this Session