Controlled Graphitization for GaN Remote Epitaxy

Although remote epitaxy offers a promising solution for growing freestanding single crystalline membrance delicate control of 2D materials lead to the successful demonstration of remote epitaxial membrane with a high material quality. In this study, we demonstrated a controlled graphitization technique to directly grow a pristine graphene buffer layer (GBL) directly on 4H-SiC substrates on which GaN was grown by remote epitaxy. The clean surface of GBL prepared by this method, free of any contamination, enables the formation of high-quality GaN epilayers with facile exfoliation. This study reveals that this approach poses an important platform for wafer-scale fabrication of high-quality freestanding GaN.