Defects Management for Efficient NIR Perovskites LEDs

Light-emitting diodes (LED) with different emission spectra are widely used in our daily life for a variety of applications. However, due to fundamental restrictions of light-emitting materials, the development of near-infrared LEDs (NIR-LEDs) is still modest. Recently, solution-processed tin-halide perovskites (THPs) have emerged as one of the most promising light-emitting materials for NIR-LED application. Electronic doping (p-type) is a unique property of THPs. To date, extensive efforts have been taken to reduce the p-doping concentration, with reference to their lead-based halide perovskites counterpart for a transition from a p-doped to an intrinsic semiconductor. This is mainly driven by the application of these materials in photovoltaic devices. However, in LED, where rather than charge extraction we want to maximize radiative charge recombination, carefully controlled p-doping becomes a favorable attribute of THPs for the successful creation of high-brightness devices. I will show how their electronic properties affect light emission efficiency, and I will present our efforts in material engineering to design and master the electronic properties of THP films in order to achieve bright and efficient LEDs.