Ga2O3 Semiconductor Gas Sensors for Operation at High Temperature

Electronic devices that can operate in extreme conditions are required for a broad range of electronic and energy applications. For example, high-temperature hydrogen gas sensors are needed for use in other manufacturing technologies where current semiconductor such as Si have limitations. In contrast, emerging (ultra) wide-bandgap (UWBG) semiconductors such as SiC, GaN, Ga₂O₃ can operate at high temperature. The Ga₂O₃ is particularly promising for this application, because it is natively robust to oxidation, and since has much lower projected wafer cost.

In this talk, I will provide a research update about our progress towards developing Ga2O3 semiconductor devised that can operate as hydrogen gas sensors for operation at 600C and higher ambient temperature. The role of p-type heterojunction contacts to n-type Ga2O3, such as NiO or Cr2O3, will be discussed. The importance of reaction and interdiffusion layers at these and other heterogeneous interfaces will be emphasized.