Towards Monolithic Integrated Quantum Photonics—Controlled Spin Defects in Hexagonal Boron Nitride Coupled to AlN Photonic Components

Optically active spin defects in wide and ultrawide bandgap semiconductors offer a promising platform for the development of next-generation quantum sensing technologies. The well-known NV centers in diamond possess intrinsic limitations for quantum sensing, due to the conflicting requirements of proximity to surface and surface states due to the 3D nature of the material. On the other hand, the 2D layered structures allow for surface proximal spin defects, ensuring effective interaction with the external environment for sensing. In this talk, spin defects in hexagonal boron nitride (hBN) and various approaches of their integration with single crystal AlN based photonic components including resonators and waveguides will be presented.