Dec 4, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A
Muhammad Shehzad Sultan1,Wojciech Jadwisienczak2,Brad R. Weiner1,Gerardo Morell1
University of Puerto Rico at Río Piedras1,Ohio University2
Muhammad Shehzad Sultan1,Wojciech Jadwisienczak2,Brad R. Weiner1,Gerardo Morell1
University of Puerto Rico at Río Piedras1,Ohio University2
We report a straightforward bottom-up approach for the synthesis of high-quality nitrogen-doped graphene quantum dots (NGQDs). This approach is cost-effective, environmentally friendly, and suitable for production of high quality NGQDs on large-scale. The as-synthesized NGQDs have high crystalline quality with an average size of 3.26 nm, are water soluble, and show strong fluorescence. The UV-vis spectra indicate that N-doping introduces new energy levels into the electronic structure of graphene, which tune the optical properties resulting in photoluminescence quantum yield (PLQY) of 73%. The NGQDs show excitation wavelength-dependent fluorescence with a maximum excitation and emission at 340 and 431 nm, respectively. Using the as-synthesized NGQDs, we fabricated a high-efficiency fast-response self-powered UV photodetector. Under the illumination of 365 nm UV light with power density of 25 mW/cm, the NGQD photodetector shows a high photoresponsivity of 37 A/W, detectivity of 1 * 10 Jones, and external quantum efficiency (EQE) of 12.6 * 10 %. This UV photoresponse is fast, with rise time of 0.29 s and fall time of 0.33 s. This work paves the way for the development of graphene-based high-performance optoelectronic devices.