Dec 3, 2024
2:00pm - 2:15pm
Hynes, Level 3, Ballroom A
Ankit Kashyap1,2,Geetu Sharma2,Divya Rawat1,Debattam Sarkar3,Niraj Kumar Singh1,Conner Wallace2,Kanishka Biswas3,Ganpati Ramanath2,Ajay Soni1
Indian Institute of Technology Mandi1,Rensselaer Polytechnic Institute2,Jawaharlal Nehru Centre for Advanced Scientific Research3
Ankit Kashyap1,2,Geetu Sharma2,Divya Rawat1,Debattam Sarkar3,Niraj Kumar Singh1,Conner Wallace2,Kanishka Biswas3,Ganpati Ramanath2,Ajay Soni1
Indian Institute of Technology Mandi1,Rensselaer Polytechnic Institute2,Jawaharlal Nehru Centre for Advanced Scientific Research3
There is a great deal of interest in high figure-of-merit (ZT) thermoelectric materials for applications such as power generation from waste heat, solid-state refrigeration to support efficient photovoltaic conversion, and heat management in nanoelectronics. High room-temperature ZT in metal chalcogenides demonstrated through nanostructuring and doping have evinced interest in their integration with flexible substrates for powering consumer electronic devices<sup>1, 2</sup>. Here, we demonstrate the integration of nanostructured thin films of Ag<sub>2</sub>Te and Sb<sub>2</sub>Te<sub>3</sub> nanostructures with polyvinylidene fluoride (PVDF) membranes for generating micro-volt-level electric fields. Ag<sub>2</sub>Te nanowires and Sb<sub>2</sub>Te<sub>3 </sub>nanoplatelets were obtained by either rapid microwave-stimulated surfactant-assisted synthesis or chemical conversion of Te nanowires without a surfactant. Both processes are efficient and amenable to scaled-up production. Micrometer-thick films of these layers were formed on PVDF by vacuum filtration, drying, and cold pressing. Both individual and bilayers of these materials remain mechanically resilient to flexing. The Ag<sub>2</sub>Te-based device with Cu contacts generated ~2.3 mV from a human finger touch, and ~18 mV with a 50 K temperature gradient<sup>3</sup>, while devices with nanostructured Ag<sub>2</sub>Te/Sb<sub>2</sub>Te<sub>3</sub> bilayers exhibited ~2.5 mV, and ~28 mV, respectively. This talk will describe the key factors of materials synthesis and processing that play a defining role in the stability and performance of these flexible mV-harvesting devices. In particular, the roles of solvents, drying rate during film formation, size, and nanostructure shape will be discussed along with strategies to enhance mechanical flexibility and the thermoelectric properties. Our findings are relevant to scalable manufacturing of flexible thermoelectric devices for low-temperature energy harvesting. <!--![endif]----><br/><!--[endif]----><br/><br/>1. Mehta, R. J.; Zhang, Y.; Karthik, C.; Singh, B.; Siegel, R. W.; Borca-Tasciuc, T.; Ramanath, G., A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly. <i>Nature Materials </i><b>2012,</b> <i>11</i> (3), 233-240.<br/>2. Mehta, R. J.; Zhang, Y.; Zhu, H.; Parker, D. S.; Belley, M.; Singh, D. J.; Ramprasad, R.; Borca-Tasciuc, T.; Ramanath, G., Seebeck and Figure of Merit Enhancement in Nanostructured Antimony Telluride by Antisite Defect Suppression through Sulfur Doping. <i>Nano Letters </i><b>2012,</b> <i>12</i> (9), 4523-4529.<br/>3. Kashyap, A.; Rawat, D.; Sarkar, D.; Singh, N. K.; Biswas, K.; Soni, A., Chemically Transformed Ag2Te Nanowires on Polyvinylidene Fluoride Membrane For Flexible Thermoelectric Applications. <i>Angewandte Chemie International Edition </i><b>2024,</b> <i>63</i> (11), e202401234.