Dec 4, 2024
9:30am - 9:45am
Hynes, Level 1, Room 108
Fanghao Zhang1,Shantal Adajian1,Bolin Liao1
University of California, Santa Barbara1
Fanghao Zhang1,Shantal Adajian1,Bolin Liao1
University of California, Santa Barbara1
Electric-field-induced thermal switching has recently garnered increasing attention for thermal management, particularly in antiferroelectric and ferroelectric materials. Previous studies have focused on PbZrO
3 thin films and PMN-PT solid solutions to achieve thermal switching. However, the small thermal resistance of thin films limits their practical applications, and the inevitable extrinsic phonon scattering in solid solutions complicates their mechanisms, hindering the understanding of how intrinsic ferroelectric polarization and strain affect thermal transport. In this study, we demonstrate significant thermal switching in a bulk single-crystal ferroelectric material at room temperature. We found that, strain, rather than domain walls, plays the most important role in the change in thermal conductivity in bulk ferroelectrics. By engineering the domain switching mechanism, we successfully achieved reversible thermal switching effect with a high switching ratio driven by an external electric field. This result suggests that ferroelectric materials with strong electrostriction can serve as electric-field-induced thermal switches and domain swithcing engineering can be utilized as an efficient way to achieve reversible thermal switching in ferroelectrics. This work is based on research supported by the U.S. Office of Naval Research under the award number N00014-22-1-2262.