Strain-Tuned Skyrmions—Revolutionizing Next-Generation Spintronics and Memory

Traditional electronic devices, plagued by high volatility, increased power consumption, and slow speeds, have driven the exploration of topological magnetic defects—such as monopoles, domain walls, vortices, and skyrmions—as potential candidates for future spintronic applications. Among these, skyrmions, induced by chiral interactions in non-centrosymmetric magnetic compounds or thin films, stand out for their exceptional promise. These nanoscale structures, capable of being manipulated, created, and annihilated, are ideal for advanced information storage and logic applications. Their soliton nature, stabilized by the Dzyaloshinskii-Moriya interaction (DMI), allows for size manipulation, leading to higher information density compared to other topological defects.<br/>Our study presents a comprehensive numerical micromagnetic analysis of skyrmions in B20 materials, such as FeGe, examining the effects of varying skyrmion core strengths under anisotropic DMI influenced by strain. As strain alters DMI, we can gain a thorough understanding of the interaction between skyrmions and defects in crystals. Furthermore, we investigate the influence of magnetic fields on the energy landscape, offering insights into the design of next-generation memory devices. The application of external magnetic fields, both along the direction of the core and against it, allows us to manipulate skyrmion stability and dynamics. This dual approach of strain tuning and magnetic field application provides a robust framework for optimizing skyrmion properties for practical use.