December 1 - 6, 2024
Boston, Massachusetts
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2024 MRS Fall Meeting & Exhibit
NM03.06.02

Above Room Temperature Ferromagnetism in Epitaxial Thin Films of the Layered Ternary Chalcogenides Fe5GeTe2 and Fe3GaTe2

When and Where

Dec 3, 2024
2:00pm - 2:30pm
Hynes, Level 1, Room 104

Presenter(s)

Co-Author(s)

Roman Engel-Herbert1,Joao Marcelo J. Lopes1

Paul-Drude-Instit für Festkörperelektronik1

Abstract

Roman Engel-Herbert1,Joao Marcelo J. Lopes1

Paul-Drude-Instit für Festkörperelektronik1
Layered magnetic materials are promising building blocks for the realization of ultra-compact spintronic devices. Moreover, combining them with other layered crystals to form the so-called van der Waals (vdW) heterostructures is a very attractive route to realize hybrid systems exhibiting integrated electronic, optical, and magnetic functionalities. So far, most of the experimental research on layered magnets and related vdW heterostructures has been conducted utilizing micrometer-sized flakes exfoliated from bulk single crystals. However, the implementation of these materials in various technologies depends strongly on the development of bottom-up, scalable synthesis approaches allowing to realize highly uniform films with well-defined interfaces. It also requires that each material component of the heterostructure remains functional, which ideally includes magnetic order above room temperature for the magnetic materials. Among different candidates, the ternary transition metal chalcogenides Fe<sub>5-x</sub>GeTe<sub>2</sub> (FGeT, x ~ 0) and Fe<sub>3</sub>GaTe<sub>2</sub> (FGaT) show a great potential due to their relatively high Curie temperature and highly tunable properties. Both materials possess a layered vdW structure with each single layer being formed of Fe and Ge (Ga) slabs encapsulated by layers of Te.<br/>In this talk, I will report on our results on epitaxial growth of FGeT and FGaT thin films on substrates such as single crystalline graphene (on SiC) and WSe<sub>2</sub> (on Al<sub>2</sub>O<sub>3</sub>) via molecular beam epitaxy. Structural characterization using different methods reveals the formation of high-quality crystalline films with sharp interfaces to the underlying templates. Importantly, magneto-transport and magnetometry measurements reveal ferromagnetic order persisting above 350 K with a predominant out-of-plane anisotropy for both FGeT and FGaT films. I will discuss the correlation between structure and magnetism, in particular the effect of thickness and Fe composition tuning on the magneto-transport properties of the films. These results represent an important advance beyond non-scalable flake exfoliation from bulk crystals, thus marking a crucial step towards the implementation of ferromagnetic chalcogenides in practical applications.

Keywords

magnetic properties | molecular beam epitaxy (MBE)

Symposium Organizers

Tanushree Choudhury, The Pennsylvania State University
Maria Hilse, The Pennsylvania State University
Patrick Vora, George Mason University
Xiaotian Zhang, Shanghai Jiao Tong University

Symposium Support

Bronze
Bruker
Two-Dimensional Crystal Consortium - Materials Innovation Platform (2DCC-MIP)

Session Chairs

Hossein Taghinejad
Tianyi Zhang

In this Session