Navigating the Structure Zone Diagram for Precision-Engineered Films Using Next-Generation HiPIMS

High-Power Impulse Magnetron Sputtering (HiPIMS) is a PVD technique that uses high current pulses to drive magnetron self-sputtering and achieve high ionization fraction. HiPIMS was initially marketed in the early 2000s as a middle ground between ‘dirtier’ ionic cathodic arc and ‘cleaner’ neutral dc sputtering albeit higher cost relative to both. This perception changed in 2017 with the introduction of next-generation pulse modules with IMPULSE® ultra-fast switching (dI/dt) and Positive Kick™ rapid voltage reversal (dV/dt) to electronically control and adjust the transient energy flux to the substrate (T*) as well as the incident particle ion energy (E*). A materials engineer can more freely move around the Structure Zone Diagram (Thornton) to achieve desired properties, e.g. morphology, orientation, crystallinity, etc. Stress control and layering can readily be accomplished with electronic recipe control. The technique enables in-situ etching and implantation to control and grade interface properties. Further, the expanding dense plasma per pulse allows quasi-conformal deposition on 3D substrates so that PVD sputtering is no longer line-of-sight. Ultra-fast switching mitigates arcs and debris generation to improve film quality for semiconductor and anti-corrosion applications. This industrial invited talk will explore several industrial applications and the broad applicability for precision-engineered coatings at the nanoscale.