December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
EL08.01.03

Diamond Diodes and Transistors—Progress on High Power Density and High Frequency Specifications

When and Where

Dec 2, 2024
11:15am - 11:30am
Sheraton, Second Floor, Back Bay A

Presenter(s)

Co-Author(s)

Anna Zaniewski1,2,Jose Orozco1,Jesse Brown1,Uday Vulchi1,Justine Vidallon1,Manimozhi Sekar1,Trevor Thornton2,1,Robert Nemanich2,1,Manpuneet Benipal1

Advent Diamond1,Arizona State University2

Abstract

Anna Zaniewski1,2,Jose Orozco1,Jesse Brown1,Uday Vulchi1,Justine Vidallon1,Manimozhi Sekar1,Trevor Thornton2,1,Robert Nemanich2,1,Manpuneet Benipal1

Advent Diamond1,Arizona State University2
Diamond offers many advantages as an ultra wide bandgap semiconductor; in addition to the large bandgap, diamond boasts extreme thermal conductivity, stability, and beneficial electrical properties. In this work, we describe recent progress on materials and fabrication challenges to realize all-diamond PIN diodes and FETs, fabricated with CVD (chemical vapor deposition) grown diamond. To produce these devices, we grow doped diamond epitaxial layers which are subsequently fabricated into devices with cleanroom techniques compatible with silicon tools. We will share characterizations of these devices and next steps for all-diamond power components and integrated circuits.

Symposium Organizers

Robert Bogdanowicz, Gdansk University of Technology
Chia-Liang Cheng, National Dong Hwa University
David Eon, Institut Neel
Shannon Nicley, Michigan State University

Symposium Support

Gold
Seki Diamond Systems

Bronze
Applied Diamond, Inc.
BlueWaveSemiconductor
Diatope GmbH
Element Six
Evolve Diamonds
Fine Abrasives Taiwan Co., LTD.
Fraunhofer USA
Great Lakes Crystal Technologies
HiQuTe Diamond
Plasmability LLC
QZabre AG
WD Advanced Materials

Session Chairs

John Ciraldo
Shannon Nicley

In this Session