Dec 2, 2024
11:15am - 11:30am
Sheraton, Second Floor, Back Bay A
Anna Zaniewski1,2,Jose Orozco1,Jesse Brown1,Uday Vulchi1,Justine Vidallon1,Manimozhi Sekar1,Trevor Thornton2,1,Robert Nemanich2,1,Manpuneet Benipal1
Advent Diamond1,Arizona State University2
Anna Zaniewski1,2,Jose Orozco1,Jesse Brown1,Uday Vulchi1,Justine Vidallon1,Manimozhi Sekar1,Trevor Thornton2,1,Robert Nemanich2,1,Manpuneet Benipal1
Advent Diamond1,Arizona State University2
Diamond offers many advantages as an ultra wide bandgap semiconductor; in addition to the large bandgap, diamond boasts extreme thermal conductivity, stability, and beneficial electrical properties. In this work, we describe recent progress on materials and fabrication challenges to realize all-diamond PIN diodes and FETs, fabricated with CVD (chemical vapor deposition) grown diamond. To produce these devices, we grow doped diamond epitaxial layers which are subsequently fabricated into devices with cleanroom techniques compatible with silicon tools. We will share characterizations of these devices and next steps for all-diamond power components and integrated circuits.