December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
MT03.02.07

Ion Beam Synthesis of Layer-Tunable and Transfer Free Graphene for Device Applications

When and Where

Dec 2, 2024
3:30pm - 3:45pm
Hynes, Level 2, Room 206

Presenter(s)

Co-Author(s)

Yongqiang Wang1,Gang Wang2,Caichao Ye3

Los Alamos National Laboratory1,Ningbo University2,Southern University of Science and Technology3

Abstract

Yongqiang Wang1,Gang Wang2,Caichao Ye3

Los Alamos National Laboratory1,Ningbo University2,Southern University of Science and Technology3
Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer-transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process [1].<br/>Carbon (C) ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~ 4E15 C-atoms/cm2). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed towards the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized.<br/>This presentation will focus on graphene layer formation mechanism, detailed characterizations, and performance characteristics of select devices fabricated through this ion beam approach including near-IR photodetectors.<br/><br/><br/>[1] G.L. Zhang, J. Jiang, S.W. Yang, L. Zheng, G.Q. Ding, L. Song, X.H. Ju, Y.Q. Wang, C.C. Ye, and G. Wang, “Layer-Tunable and Transfer-Free Graphene on Arbitrary Substrates via Ion Beam Towards Versatile Applications”, Energy and Environmental Materials, 0 (2024) e12730.

Keywords

ion-implantation

Symposium Organizers

Hamed Attariani, Wright State University
Long-Qing Chen, The Pennsylvania State University
Kasra Momeni, The University of Alabama
Jian Wang, Wichita State University

Session Chairs

Hamed Attariani
Kasra Momeni

In this Session