Two-Dimensional Electron Gasses in Freestanding SrTiO3 Membranes—Device Fabrication And Transport Measurements

The development of sacrificial liftoff methods for oxide materials has enabled a route for realizing free-standing STO membranes, which can be transferred from the parent growth substrate to virtually any substrate of choice. This enables easy integration of STO materials in silicon-based electronic devices and new possibilities for device fabrication and functionality. STO-based two-dimensional gasses exhibit an exciting palette of properties, including gate-tunable spin-orbit coupling, metal-insulator transitions, and gate-tunable superconducting transitions. We present an experimental study of the electronic properties of STO membranes of different thicknesses transferred on silicon. Methods are developed for achieving electrical contact to the STO electron systems, and devices are characterized as a function of temperature, gate, and magnetic field.