December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
SF05.03.04

Atomic Disorder Engineering of N-Type Thermoelectric Fe2VAl Approaching the ZT of Bi2Te3

When and Where

Dec 2, 2024
4:15pm - 4:30pm
Hynes, Level 2, Room 203

Presenter(s)

Co-Author(s)

Russell Taylor1,Cory Cline1,Tao Fang1,Weiling Dong1,Apoorva Joshi1,Geoffroy Hautier1,Wei Chen2,Ian Baker1,Jifeng Liu1

Dartmouth College1,Université Catholique de Louvain2

Abstract

Russell Taylor1,Cory Cline1,Tao Fang1,Weiling Dong1,Apoorva Joshi1,Geoffroy Hautier1,Wei Chen2,Ian Baker1,Jifeng Liu1

Dartmouth College1,Université Catholique de Louvain2
The L2<sub>1</sub> intermetallic compound Fe<sub>2</sub>VAl is an ecofriendly, low cost, and easy to process potential replacement for conventional low temperature (250 - 500 K) thermoelectric materials used for waste-heat energy harvesting, such as Bi<sub>2</sub>Te<sub>3</sub>, which is brittle and uses toxic and expensive elements. The main issue with Fe<sub>2</sub>VAl is its high thermal conductivity (~25 W/mK at 300 K). The aim of this project is to identify dopants and engineer atomic disorder to enhance both the thermal and electrical properties of bulk n-type Fe<sub>2</sub>VAl.<br/>While the highly ordered L2<sub>1</sub> phase is the ground state, the higher temperature B2 (Al-V site swapping) and A2 (fully disordered) phases, whose transition temperatures are identified using DSC, can be retained through quenching. With the addition of Ge, these meta-stable phases, which are quantified using XRD, can be further stabilized. The band structures of the disordered phases show a flattening of the conduction band and therefore an increased effective carrier mass and reduced mobility which is compensated for by the increased carrier density. The result is a high Seebeck coefficient approaching 200 µV/k at 350 K. With reduced lattice periodicity from large element doping and disordered phases, the temperature dependent thermal conductivity shows “glass-behavior” and is reduced by &gt;80% to below 5 W/mK. The net result is a figure of merit, ZT, &gt;0.7 at 400 K, twice the value previously reported and rivaling the performance of Bi<sub>2</sub>Te<sub>3</sub> (maximal ZT ~0.9).

Keywords

interatomic arrangements | thermal conductivity

Symposium Organizers

Yoshisato Kimura, Tokyo Institute of Technology
Florian Pyczak, Helmholtz-Zentrum Hereon
Petra Spörk-Erdely, Graz University of Technology
Akane Suzuki, GE Aerospace Research

Symposium Support

Gold
GE Aerospace Research

Session Chairs

Ian Baker
Sage Bauers

In this Session