December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
EL05.11.13

Monolayer MoS2-Based High-Temperature Operating Neuromorphic Device

When and Where

Dec 5, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A

Presenter(s)

Co-Author(s)

Govind Gupta1,2

Council of Scientific & Industrial Research–National Physical Laboratory1,Academy of Scientific & Innovative Research2

Abstract

Govind Gupta1,2

Council of Scientific & Industrial Research–National Physical Laboratory1,Academy of Scientific & Innovative Research2
As technology becomes more widespread, there is an increasing demand for high-temperature neuromorphic devices to meet space exploration requirements and extreme industrial environments. Additionally, as the Internet of Things (IoT) expands, the need for more powerful and efficient computing and data processing capabilities is growing. To meet this demand, researchers are investigating the creation of neuromorphic devices that mimic the structure and function of the human brain. Here, we present a scalable monolayer MoS2-based neuromorphic device designed to operate effectively at high temperatures (~100C). Monolayer MoS2, a two-dimensional semiconductor material renowned for its exceptional thermal stability and mechanical flexibility, is utilized to develop the memristive device. The fabricated device withstands high-temperature conditions, is adaptable to various applications, and demonstrates excellent electrical characteristics, such as low power consumption, high switching speed, high resistance ratio (~100), low switching voltage, and reliable endurance (~1000). In addition, the device exhibits neuromorphic behavior, replicating the synaptic plasticity observed in biological neural networks. This remarkable functionality has significant implications for artificial intelligence, enabling advanced cognitive computing tasks even in challenging environments. By combining materials science and neuromorphic computing, this research heralds the beginning of a new era in electronics. It merges resilience and intelligence, opening up unprecedented possibilities. The monolayer MoS2-based neuromorphic device is an exceptional example of human ingenuity and perseverance in overcoming the challenges of harsh environments as industries continue to push the boundaries of exploration and innovation. Its advancement meets the demand for high-temperature electronics and lays the groundwork for future innovations, allowing electronic systems to interact with and adapt seamlessly to environmental demands.

Keywords

2D materials

Symposium Organizers

Paschalis Gkoupidenis, Max Planck Institute
Francesca Santoro, Forschungszentrum Jülich/RWTH Aachen University
Ioulia Tzouvadaki, Ghent University
Yoeri van de Burgt, Technische Universiteit Eindhoven

Session Chairs

Sahika Inal
Ioulia Tzouvadaki

In this Session