Si-Doped HfO₂—Enhancing Pyroelectric Properties for Next-Generation CMOS Compatible Self-Powered Devices

In search of advanced materials to drive the evolution of self-powered devices, Si-doped hafnium oxide (HSO) emerges as a promising candidate due to its remarkable pyroelectric properties. This study investigates the mechanisms behind the enhancement of the CMOS-compatible HSO thin film pyroelectric properties, aiming to accelerate their functionality within self-powered photodetectors. Through experimental analysis, we demonstrate that Si doping significantly improves the pyroelectric property. These enhancements are attributed to the induced structural modifications and the stabilization of the non-centrosymmetric phase, essential for pyroelectric activity. In addition, the formation of Schottky interface between Ti and HSO layer contributes to the enrichment of overall output current. The optimized Pt/Ti/HSO/Pt/Ti/SiO_{<span style="font-size:10.8333px">2</span>}/Si stack exhibit a pyroelectric coefficient surpassing that of undoped HfO₂ and proclaimed Si-doped HfO₂ by a substantial margin, making them ideal for integration into next-generation self-powered devices. This advancement paves the way for innovative applications in pyroelectric energy harvesting, motion detection, infrared detection, gas sensing, and beyond, aligning with the increasing demand for sustainable and efficient electronic solutions.