Influence of Cosmic Rays on Monolayer MoS₂ Transistor

The space industry has steadily grown since the last century and has the potential to become an even larger industry in the future. The space industry pays significant attention to the effects of cosmic rays on devices in satellites or spacecraft. The environment of space in which satellites or spacecraft operate is harsh due to the presence of a large number of high-energy electrons, neutrons and protons. These particles, collectively known as cosmic rays, travel through space at nearly the speed of light. Cases of satellite malfunctions caused by electronic damage from cosmic rays have been reported. Therefore, it is crucial to investigate the impact of cosmic rays on electronics within the space industry and to appropriately respond to the findings in order to ensure the success of space missions.<br/> Two-dimensional(2D) MoS₂ has potential to serve as an alternative semiconductor material for future electronics due to its attractive semiconducting properties, including high mobility and a tunable band gap. Ultra-scaled transistors are of interest in the development of next-generation electronic devices, and devices utilizing a MoS₂ channel has been explored.<br/> Herein, we investigate changes in the electrical characteristics of MoS₂ transistors before and after exposure to electron beam. A monolayer MoS2 transistor with a back gate was used for the investigation. Au electrodes were deposited by e-beam evaporator on monolayer MoS₂. These results could provide valuable insights into developing and fabricating suitable devices capable of operating in the extreme environment of space.