Vanadium-Based Doping Concentration Modulation in CVD-Grown MoS₂ for Vertical UV-Vis Photodiodes

2D molybdenum Disulfide has been used extensively as a semiconductor in recent years. Typically, MoS₂ demonstrates an n-type behavior as there are sulfur vacancies that are present in the material. However, the large-scale synthesis of p-type MoS₂ and other 2D materials can still be challenging. Various methods can be used for doping the pristine MoS₂ to provide p-type behavior and one of these methods is substitutional doping. In this work we have achieved p-Type behavior in CVD grown MoS₂ through a similar method. Moreover, the existence of doping atoms was confirmed by using XPS (X-ray photoelectron spectroscopy), EDX (Energy dispersive X-ray) and TEM (Transmission Electron Microscopy). With variation in the doping concentration, the electrical transport properties of MoS₂ are modulated to show ambipolar and p-Type behavior. The p-type MoS₂ is then used to fabricate a photodiode which shows promising performance over different wavelengths from UV light to visible light. This proposed method for the synthesis of p-Type MoS₂ can have a lot of potential applications ranging from photodiodes, photodetectors, optoelectronics, field effect transistors, synaptic transistors, advanced materials heterostructures and energy harvesting.