Stretchable and Breathable Nanomesh-Based RRAM with Percolated Nanoparticle Networks

Resistive random access memory (RRAM) stands out as a leading next-generation non-volatile memory, offering simplicity in operation and fabrication, thus making it suitable for wearable and skin-attachable devices. However, the insulating layer used in conventional RRAM, typically composed of inorganic materials, possesses high mechanical strength due to strong chemical bonding and crystalline structure, making it challenging to integrate into flexible components. Organic semiconductors like Musin and Pentacene have been proposed as alternatives, but their memory characteristics (endurance, chemical stability, durability, etc.) are inferior to those based on inorganic materials. Additionally, applying non-porous structures to wearable and skin-attachable devices often leads to discomfort and skin irritation due to poor breathability. Therefore, developing flexible and porous structure components based on inorganic materials is essential for applying RRAM components to wearable and skin-attachable devices. Herein, we present sliver selenide (Ag₂Se) embedded nanomesh-based RRAM devices, which possess flexibility and breathability. Silver (Ag) nanoparticles are patterned on flexible and breathable nanomesh. Furthermore, we seek to form silver selenide (Ag₂Se) inorganic semiconductor material by reacting with selenium precursor solution, followed by depositing aluminum (Al) to achieve a flexible and breathable Metal-Insulator-Metal (MIM) structure. The Ag₂Se nanoparticles embedded nanomesh-based RRAM presents outstanding switching characteristics (<i>I</i>_on/<i>I</i>_off&gt; 10⁶, and retention time &gt;10⁶ s). This study suggests the possibility of further application for memory devices of wearable and skin-attachable devices.