December 1 - 6, 2024
Boston, Massachusetts

Event Supporters

2024 MRS Fall Meeting & Exhibit
EL06.07.06

Consistent Creation of Bright, Stable and Monochromatic Room Temperature Quantum Emitters in Hexagonal Boron Nitride

When and Where

Dec 5, 2024
4:15pm - 4:30pm
Sheraton, Second Floor, Independence East

Presenter(s)

Co-Author(s)

Muchuan Hua1,Wei-Ying Chen1,Hanyu Hou1,2,Venkata Surya Chaitanya Kolluru1,Thomas E. Gage1,Haihua Liu1,Jian-Min Zuo2,Maria Chan1,Benjamin Diroll1,Jianguo Wen1

Argonne National Laboratory1,University of Illinois at Urbana-Champaign2

Abstract

Muchuan Hua1,Wei-Ying Chen1,Hanyu Hou1,2,Venkata Surya Chaitanya Kolluru1,Thomas E. Gage1,Haihua Liu1,Jian-Min Zuo2,Maria Chan1,Benjamin Diroll1,Jianguo Wen1

Argonne National Laboratory1,University of Illinois at Urbana-Champaign2
Quantum emitters (QE), also known as single photon emitters, are essential components of measurement-based quantum information science systems. The practical usage of QEs requires perfect purity, indistinguishability and high creation efficiency of single photons. Hexagonal boron nitride (hBN) has been found to be possible host for QEs and been extensively studied for QE creation as its large electronic band gap and optical phonon energy, in principle, allowing it to host room temperature QEs with excellent monochromaticity. Although significant efforts have been made to realize deterministic QE creation in hBN, most of the reported approaches resulted in QEs with broad emission wavelength distribution and inconsistent optical properties. In this presentation, the authors report a deterministic creation of QEs by applying masked-carbon-ion implantation on freestanding hBN flakes, where almost identical room temperature QEs (emission center wavelength = 590.7 ± 2.7 nm) were produced consistently with perfect monochromaticity (full width half maximum = 7.1 ±1.7 nm) and excellent brightness (maximum emission rate approaching 1MHz). The QEs created by our method also showed exceptional stability against optical excitation, where they survived 1 MW/cm<sup>2</sup> (532nm) laser excitation for hours with no observable degradation in emission rate. Our method provides a reliable platform for characterization and fabrication research, helping to reveal the origins of the QEs in hBN and favoring the practical application, especially the industrial-scale production of quantum technology.

Keywords

2D materials

Symposium Organizers

Qiushi Guo, City University of New York
Doron Naveh, Bar-Ilan University
Miriam Vitiello, Consiglio Nazionale delle Ricerche
Wenjuan Zhu, The University of Illinois at Urbana-Champaign

Session Chairs

Melissa Li
Haoning Tang

In this Session