Dec 4, 2024
8:00pm - 10:00pm
Hynes, Level 1, Hall A
Shuya Masuda1,2,Yosuke Harashima1,Shogo Takasuka1,Tomoaki Takayama1,Mikiya Fujii1
Nara Institute of Science and Technology1,Sumitomo Electric Industries, Ltd.2
Shuya Masuda1,2,Yosuke Harashima1,Shogo Takasuka1,Tomoaki Takayama1,Mikiya Fujii1
Nara Institute of Science and Technology1,Sumitomo Electric Industries, Ltd.2
Metal-oxide-based photocathodes are attractive components in photoelectrochemical cells for hydrogen production. This is due to both the ease of the synthesis and their stability under water-splitting conditions. However, most metal oxides are classified as photoanodes (namely, n-type semiconductors), resulting in a few metal-oxide-based photocathodes (p-type semiconductors). Therefore, in order to facilitate the experimental discovery of new metal oxide photocathodes, it is important to establish a methodology to easily classify candidates of the metal oxides as p- or n-types. In this study, we exhibit a new method to classify the p- and n-types. The key to developing our method lies in the combination of defect chemistry insight from materials science and the neural network potential of a machine learning technique. This combination has brought a sufficient classifier for semiconductor properties. Furthermore, the aforementioned method was employed to extract the candidates from the Materials Project database, leading to the experimental discovery of a new metal oxide photocathode.