Dec 3, 2024
9:15am - 9:30am
Sheraton, Second Floor, Back Bay C
Jaewon Wang1,Hyeonwoo Lee1,Jaemin Kim1,Haeng Un Yeo1,Cheol Hwan Yoon1,Min Seok Yoo2,Kitae Park1,Joonki Suh1,Chanyong Hwang3,Tae-Sik Yoon1,Minsu Seol2,Hyung-Joon Shin1,Zonghoon Lee1,Changwook Jeong1,Soon-Yong Kwon1
Ulsan National Institute of Science and Technology1,Samsung Advanced Institute of Technology2,Korea Research Institute of Standards and Science3
Jaewon Wang1,Hyeonwoo Lee1,Jaemin Kim1,Haeng Un Yeo1,Cheol Hwan Yoon1,Min Seok Yoo2,Kitae Park1,Joonki Suh1,Chanyong Hwang3,Tae-Sik Yoon1,Minsu Seol2,Hyung-Joon Shin1,Zonghoon Lee1,Changwook Jeong1,Soon-Yong Kwon1
Ulsan National Institute of Science and Technology1,Samsung Advanced Institute of Technology2,Korea Research Institute of Standards and Science3
The wafer-scale integration of high-quality, ultrathin high-<i>k</i> dielectrics on two-dimensional (2D) semiconductors is critical for realizing high-performance 2D electronics. Van der Waals dielectrics, such as hexagonal boron nitride (hBN), are typically introduced to preserve the intrinsic properties of 2D semiconductors; however, synthesizing these dielectrics on the wafer-scale and integrating them with 2D semiconductors is challenging. In this study, we show that hybrid hBN/high-<i>κ</i> dielectric heterostructures can be created on wafer scales using a metal-organic chemical vapor deposition (MOCVD) of bilayer hBN epitaxially grown on Ni(111), followed by an atomic layer deposition (ALD) of high-<i>κ</i> dielectric materials. The utilization of wafer-scale single-crystal bilayer hBN as an interlayer between a high-<i>κ</i> dielectric and the 2D channel demonstrates interface scattering suppression in 2D transistor arrays on a wafer scale. Using a pulse-mode MOCVD system, in which precursors are injected sequentially with an interruption step, we achieve the high-throughput, spatially uniform growth of hBN on a wafer-scale. The unidirectional alignment of hBN originates from its epitaxial growth guided by the atomic stacking configurations of the hBN/Ni(111) crystal structures. Atomic-scale structural characterization and first-principle calculations confirm the stability of bilayer hBN nucleated by the Ni step. Additionally, we demonstrate the fabrication of spatially uniform hBN/high-<i>κ</i> dielectric stacks with an ultrathin metal seed layer, and a damage-free transfer method of the hybrid dielectric stacks using capillary force-assisted bubbling transfer, which successfully integrates onto the polycrystalline molybdenum disulfide (MoS<sub>2</sub>) channel. Monolayer MoS<sub>2</sub> field-effect transistor arrays supported by the hybrid dielectric stacks show a significant enhancement in electronic performance and reliability, including the subthreshold swing, interface trap density, and carrier mobility.