Guided Growth of 1D van der Waals Nanowires on 2D vdW Flakes for Enhanced Optoelectronic Functionalities

1D van der Waals (vdW) materials, characterized by their chain-like structures connected by weak vdW forces, have emerged as promising candidates for various applications owing to their inherent anisotropic nature and intrinsic 1D dimensionality¹. Kind of these materails are Sb₂S₃ and Sb₂Se₃ which are semiconductors with promising potential for optoelectronics devices^2–4. These materials unique properties, combined with our group's expertise in guided growth⁵, allowed us to fabricate well-aligned Sb₂Se₃ and Sb₂S₃ nanowires using a custom chemical vapor deposition (CVD) system. We used ReS₂ and ReSe₂ flakes, which are 2D vdW materials with optoelectronic functionalities^6,7, as substrates for the nanowire growth.<br/>Scanning electron microscopy (SEM) confirmed the nanowire morphology and orientation on the substrates. Energy-dispersive X-ray spectroscopy (EDS) validated their chemical composition. Focused Ion Beam (FIB) is being used to prepare cross-sectional lamellae for HR-TEM analysis, which elucidate the epitaxial relationships and growth plane orientation. Following this, a photodetector was fabricated to characterize the optoelectronic properties.<br/>The success in growing Sb₂Se₃ and Sb₂S₃ nanowires on ReSe2 and ReS2 flakes suggests promising avenues for exploring mixed-dimensional heterostructures. By understanding how these 1D vdW nanowires interact with 2D vdW flakes, we can tailor their properties to create next-generation optoelectronic devices with functionalities beyond imagination.<br/><br/>References:<br/>1. Balandin, A. A., Kargar, F., Salguero, T. T. & Lake, R. K. One-dimensional van der Waals quantum materials. <i>Materials Today</i> vol. 55 74–91 Preprint at https://doi.org/10.1016/j.mattod.2022.03.015 (2022).<br/>2. Ye, K. <i>et al.</i> Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition. <i>J Mater Sci Technol</i> <b>75</b>, 14–20 (2021).<br/>3. Sun, G., Ling, R., Cai, Y. & Wang, A. Vapor-Phase Epitaxial Growth of Large-Scale High Crystalline Sb2Se3 Nanowires for Photodetector Application. <i>J Electron Mater</i> <b>52</b>, 368–375 (2023).<br/>4. Ma, Z. <i>et al.</i> Chemical Vapor Deposition Growth of High Crystallinity Sb 2 Se 3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors. <i>Small</i> <b>15</b>, (2019).<br/>5. Tsivion, D., Schvarzman, M., Popovitz-Biro, R., von Huth, P. & Joselevich, E. Guided Growth of Millimeter-Long Horizontal Nanowires with Controlled Orientations. <i>Science (1979)</i> <b>324</b>, 1312–1314 (2009).<br/>6. Marzik, J. V, Kershaw, R., Dwight, K. & Wold, A. <i>Photoelectronic Properties of ReS2 and ReSe, Single Crystals</i>. <i>JOURNAL OF SOLID STATE CHEMISTRY</i> vol. 51 (1984).