December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
NM04.04.04

Exploring Graphene/Oxide Hybrid Heterostructures

When and Where

Dec 3, 2024
2:30pm - 3:00pm
Hynes, Level 1, Room 110

Presenter(s)

Co-Author(s)

Woo Seok Choi1

Sungkyunkwan University1

Abstract

Woo Seok Choi1

Sungkyunkwan University1
Hybrid heterostructures, composed of 2D layered materials and perovskite oxides, showcase unexpected physical and chemical properties arising from functionally synergistic interfaces [1]. Specifically, the interfacial interaction between the strongly correlated nature of complex oxides and quantized electronic states of graphene allows for facile modulation of the electromagnetic characteristics that would not have been achievable otherwise.
First, we show that the quantum Hall effect of graphene can be employed as a quantum sensor of the electrochemical state of perovskite oxide. The substantial voltage scaling in the quantum Hall states of graphene [2] can be utilized to monitor the oxygen vacancy concentration in the SrTiO3 thin film within the graphene/SrTiO3 hybrid heterostructures [3].
Second, we reveal that the interfacial interaction with a ferromagnetic LaCoO3 epitaxial thin film effectively lifts the spin degeneracy in graphene [4]. The presentation highlights a substantial spin exchange splitting in graphene, up to several hundreds of meV, which can be adjusted by the gate electric field. The substantial and tunable exchange splitting is attributed to interfacial charge transfer, as the conventional magnetic proximity effect fails to explain the magnitude and adjustability of the observed exchange splitting.
Hybrid heterostructures used as a platform hold the potential to open avenues for unexpected electromagnetic functionalities.

References
[1] Kang et al. Adv. Mater. 31, 1803732 (2019).
[2] Park et al. Nano Lett. 16, 1754 (2016).
[3] Kang et al. Adv. Mater. 29, 1700071 (2017).
[4] Shin et al. Adv. Funct. Mater. 34, 2311287 (2024).

Keywords

Hall effect | oxide | thin film

Symposium Organizers

Sanghoon Bae, Washington University in Saint Louis
Jeehwan Kim, Massachusetts Institute of Technology
Ho Nyung Lee, Oak Ridge National Laboratory
Nini Pryds, Technical University Denmark

Session Chairs

Thomas Jespersen
Hyunseok Kim

In this Session