Implementation of In Situ and Quasi-In Situ Characterization Techniques for the Development of Deposition Processes Enabling Atomic Scale Precision for Device Fabrication

Over the past 20 years, the microelectronics industry has undergone numerous technological developments in fabrication strategies in order to sustain the constant miniaturization pace of integrated devices dictated by Moore’s law. The era of ultra-miniaturized device fabrication with dimensions scaling below 10 nm is currently on its way, enabled simultaneously by the introduction of exotic materials (eg graphene and 2D materials), highly complex 3D architectures and advanced atomic-scale fabrication processes.<br/>In this presentation, conventional in situ diagnostic tools enabling atomic-scale deposition process monitoring will be reviewed in details, based on examples taken from the literature, with special attention devoted to their strength and limitation in reaching the nanoscale size. The atomic-scale plasma processing strategy recently developed at LTM laboratory in Grenoble based on a bottom-up selective thin film formation will be described. Plasma – surface interaction mechanisms at play during growth will be identified, thanks to the assistance of dedicated in situ and quasi in situ techniques, such as ellipsometry, X-Ray photoelectron spectroscopy and Quartz Crystal Microbalance, illustrating how a careful definition of various experimental parameters can lead to atomic-scale precision in terms of both thickness and placement.