2D TMD Growth and Fabrication for Large-Area Electronics

Large-area electronics like displays and sensors rely on Thin Film Transistors (TFTs) for their backplane circuitry. Amorphous silicon (a-Si), polysilicon (poly-Si), and IGZO are common backplane TFT semiconductors, but they lack the ideal combination of high carrier mobility, on/off ratio, and stability. To address this and enable flexible devices, Transition Metal Dichalcogenide (TMD) semiconductors, particularly MoS₂, are emerging as promising alternatives. This talk will explore the synthesis and fabrication process of MoS₂-based backplane TFTs designed to advance large-area displays and tactile sensors. Our approach utilizes a modified metal-organic chemical vapor deposition (MOCVD) process to synthesize high-quality MoS₂, followed by conventional photolithography and etching for TFT array fabrication. The inherent mechanical flexibility of MoS₂ offers the potential for diverse wearable devices, including OLEDs, micro-LED displays, and tactile sensors, which are challenging to achieve with traditional materials.