Overcoming the Limits of Silicon—Strain Engineering for Enhanced Optoelectronic Applications

Silicon (Si) is an important material for microelectronics but limitations in its inherent optical absorption hinder its use in broader optoelectronic applications. This work explores how strain engineering can overcome this limitation. We present two approaches: (1) utilizing biaxial strain achieved through pneumatic pressure and (2) leveraging geometry-induced strain from crumpled Si nanomembranes (NMs). Both methods effectively reduce the Si bandgap, extending its light absorption range beyond its intrinsic limit. The first approach achieves a significant extension up to 1550 nm, crucial for LiDAR sensors in autonomous vehicles. These findings highlight the potential of strain engineering for developing advanced Si-based photodetectors and image sensors, paving the way for broader applications in optoelectronics.