Dec 5, 2024
1:30pm - 2:00pm
Hynes, Level 1, Room 110
Xueshi Gao1,Chun Ning (Jeanie) Lau1
The Ohio State University1
Xueshi Gao1,Chun Ning (Jeanie) Lau1
The Ohio State University1
The flat dispersion in rhombohedral stacked
N-layer graphene, where
E~kN, gives rise to diverging (for
N>2) density of states that are unstable to enormous electronic interactions, leading to the formation of electronic states with spontaneous broken symmetries. In free-standing samples, the electronic interactions are further strengthened due to the absence of screening. Using transport measurements on suspended dual-gated devices, we observe an insulating ground state with a large interaction-induced gap up to 80 meV at half filling. This gapped state can be enhanced by a perpendicular magnetic field, and suppressed by an interlayer potential, carrier density, or a critical temperature of ~40 K, and is most likely a layer antiferromagnet. Upon small doping, we observe prominent conductance hysteresis and giant magnetoconductance that exceeds 1000% as a function of magnetic fields. Both phenomena are tunable by density and temperature, and disappear at
n>10
12 cm
-2 or
T>5K. These results are confirmed by first principles calculations, which indicate the formation of a half-metallic state in doped r-FLG, in which the magnetization is tunable by electric field. Our results demonstrate that magnetism and spin polarization, arising from the strong electronic interactions in flat bands, emerge in a system composed entirely of carbon atoms. In the future, different ground states are expected to be stabilized by substrate engineering. Finally I will discuss a technique to make more robust suspended gates.