December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
EL02.03.04

Comprehensive Development and Analysis of Sputter-Grown Superlattice Films

When and Where

Dec 3, 2024
9:45am - 10:00am
Sheraton, Second Floor, Republic A

Presenter(s)

Co-Author(s)

Simone Prili1,2,3,Vara Jonnalagadda2,Valeria Bragaglia2,Jesse Luchtenveld2,4,Fabrizio Arciprete1,3,Abu Sebastian2,Syed Sarwat2

Università degli Studi di Roma Tor Vergata1,IBM Research-Zurich2,National Research Council3,University of Groningen4

Abstract

Simone Prili1,2,3,Vara Jonnalagadda2,Valeria Bragaglia2,Jesse Luchtenveld2,4,Fabrizio Arciprete1,3,Abu Sebastian2,Syed Sarwat2

Università degli Studi di Roma Tor Vergata1,IBM Research-Zurich2,National Research Council3,University of Groningen4
Phase change materials (PCMs) hold great promise for next-generation neuromorphic hardware. Although standard Ge-Sb-Te (GST) alloys face challenges with high reset currents and resistance drift, limiting scalability and precision, chalcogenide superlattices (CSLs) offer a compelling solution. Particularly GST/Sb<sub>2</sub>Te<sub>3</sub> combinations offer a solution by reducing reset currents through enhanced control over van der Waals (vdW) gaps and interfaces [1]. Unlike GeTe/Sb<sub>2</sub>Te<sub>3</sub> CSLs, which suffer from intermixing, GST/Sb<sub>2</sub>Te<sub>3</sub> maintains better interface control [2], essential for reset current reduction.<br/>Our research provides a systematic study of the optimal sputter growth conditions for highly oriented GST/Sb<sub>2</sub>Te<sub>3</sub> CSLs on SiO<sub>2</sub> and carbon substrates, offering an overview of the deposition window exploring various growth parameters. Substrates were pre-cleaned with acetone and isopropanol, followed by Ar+ inverse sputtering etching. The deposition involved a two-step process [3]: room temperature deposition of a Sb<sub>2</sub>Te<sub>3</sub> seed layer, followed by annealing and high T deposition of the rest of the film. X-ray diffraction (XRD) and spectroscopic ellipsometry were used to analyze structural properties and energy bandgaps, respectively.<br/>High-temperature deposition of Sb<sub>2</sub>Te<sub>3</sub> can cause Te desorption, impacting CSL quality. By fine-tuning deposition parameters, we mitigated these effects on Sb<sub>2</sub>Te<sub>3</sub> and also grew ordered cubic GST films with different stacking. We developed a diagram of optimal growth conditions for both materials, facilitating the fabrication of CSLs with various periodicities. XRD confirmed satellite peaks, indicative of periodicity, consistent across different substrates. Resistivity measurements revealed strong anisotropy, with significant in-plane/cross-plane differences.<br/>The impact of the Sb<sub>2</sub>Te<sub>3</sub> seed layer was explored, with high-temperature deposited seed introduced for stress mitigation at the crystallization interface. Ellipsometry showed that the energy bandgap remained consistent across different periodicities. Finally, TEM analysis provided insights into the local structure of low periodicity superlattices.<br/><b>REFERENCES</b><br/>1. A. I. Khan, <i>et al</i>, Nano Lett. 2022, 22, 6285−6291<br/>2. S. Cecchi, <i>et al</i>. <i>APL Mater.</i> 5, 026107 (2017)<br/>3. Y. Saito, <i>et al</i>. AIP advances 6, 045220 (2016)

Keywords

epitaxy | sputtering | van der Waals

Symposium Organizers

Fabrizio Arciprete, University of Rome Tor Vergata
Valeria Bragaglia, IBM Research Europe - Zurich
Juejun Hu, Massachusetts Institute of Technology
Andriy Lotnyk, Leibniz Institute of Surface Engineering

Session Chairs

Riccardo Mazzarello
Olivier Thomas

In this Session