Plasma-Surface Interaction During Plasma-Enhanced ALD and ALE—From 2D Materials to Quantum Devices

Atomic layer deposition (ALD) and atomic layer etching (ALE) have become critical techniques in the semiconductor industry, providing the precision and control required for the fabrication of next-generation devices. As technology nodes continue to shrink, the demand for ultra-thin films and atomic-level etching processes has surged, making ALD and ALE indispensable for achieving the necessary material properties and dimensional accuracy. These methods offer unparalleled advantages in conformality, uniformity, atomic-scale precision, and selectivity, enabling the development of advanced semiconductor components. In many cases, plasma-enhanced processes are required to achieve the desired film properties and etching profiles, offering additional benefits such as improved reactivity and lower process temperatures. Consequently, the importance of plasma-enhanced ALD and ALE will grow significantly as the semiconductor industry continues to push the boundaries of miniaturization and performance in upcoming technology nodes. This evolution necessitates a deeper comprehension of plasma-surface interactions during these processes, a focus that has been central to our research for many years. In this presentation, we will highlight recent insights into the plasma-surface interaction during ALD and ALE, drawing examples from 2D materials processing and quantum technology applications. We will discuss fundamental aspects, such as the role of surface ion bombardment and surface radical recombination, based on advanced experimental studies.