December 1 - 6, 2024
Boston, Massachusetts
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2024 MRS Fall Meeting & Exhibit
SF04.05.03

Overcoming Polarons to Achieve p-Type Conductivity in Ultrawide-Bandgap Oxides

When and Where

Dec 3, 2024
11:30am - 11:45am
Hynes, Level 3, Room 311

Presenter(s)

Co-Author(s)

John Lyons1,Anderson Janotti2

U.S. Naval Research Laboratory1,University of Delaware2

Abstract

John Lyons1,Anderson Janotti2

U.S. Naval Research Laboratory1,University of Delaware2
A major shortcoming of ultrawide-bandgap semiconductors is their lack of bipolar doping. For some ultrawide-bandgap oxides, n-type conductivity has been demonstrated, but p-type conductivity is in general inhibited by a strong tendency to form self-trapped holes (small polarons). This problem especially afflicts Ga2O3, which is among the most promising UWBG oxides, but in which polaronic hole trapping causes acceptors to have ionization energies exceeding 1 eV. Related materials, such as LiGa5O8, also suffer from hole trapping. Recently, rutile germanium oxide (r-GeO2), with a band gap near 4.7 eV, was found to break from this paradigm. Though calculations found holes trapped much less strongly, the predicted acceptor ionization energies are still relatively high (~0.4 eV), limiting p-type conductivity [1,2]. Since r-GeO2 appears to be an outlier, perhaps due to its crystal structure, the properties of a set of rutile oxides are calculated and compared. Our hybrid density functional calculations here show that rutile TiO2 and SnO2 strongly trap holes at acceptor impurities, in agreement with prior studies. However, self-trapped holes are found to be unstable in r-SiO2, a metastable polymorph of silica with an 8.5 eV band gap. Group-III acceptor ionization energies are also found to be lower in r-SiO2 than in the other rutile oxides. Furthermore, acceptor dopants have sufficiently low formation energies such that compensation by donors (such as oxygen vacancies) could be avoided, at least under O-rich limit conditions. Based on the results [3], it appears that r-SiO2 has the potential to exhibit the most efficient p-type conductivity when compared to other UWBG oxides.

[1] S. Chae, K. Mengle, K. Bushick, J. Lee, N. Sanders, Z. Deng, Z. Mi, P. F. P. Poudeu, H. Paik, J. T. Heron, and E. Kioupakis, Appl. Phys. Lett. 114, 102104 (2019).
[2] J. L. Lyons, J. Appl. Phys. 131, 025701 (2022).
[3] J. L. Lyons and A. Janotti, J. Phys.: Condens. Matt. 36, 085501 (2023).

This work was supported by the ONR/NRL 6.1 Basic Research Program.

Keywords

oxide

Symposium Organizers

Jianlin Liu, University of California, Riverside
Farida Selim, Arizona State University
Chih-Chung Yang, National Taiwan Univ
Houlong Zhuang, Arizona State University

Session Chairs

Farida Selim
Blas Uberuaga

In this Session